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| Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 5.90.2 Unit: mm 4.90.2 q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -80 -80 -5 -1 - 0.5 750 150 -55 ~ +150 Unit V V V A A mW C C 0.45-0.1 1.27 1.27 +0.2 13.50.5 s Absolute Maximum Ratings (Ta=25C) 2.540.15 0.7-0.2 +0.3 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.70.1 8.60.2 s Features 0.45-0.1 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA VCE = -5V, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10V, IE = 50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz min typ 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package max - 0.1 Unit A V V V -80 -80 -5 90 50 100 - 0.2 - 0.85 120 11 20 - 0.4 -1.2 220 V V MHz pF *h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 1 Transistor PC -- Ta 1.2 -1.2 Ta=25C 2SA777 IC -- VCE -1.2 VCE=-10V Ta=25C -1.0 IC -- IB Collector power dissipation PC (W) 1.0 -1.0 IB=-10mA Collector current IC (A) 0.8 - 0.8 -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0.6 - 0.6 0.4 - 0.4 0.2 - 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 Collector current IC (A) -9mA - 0.8 - 0.6 - 0.4 - 0.2 0 0 -2 -4 -6 -8 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 -1 Ta=-25C 75C IC/IB=10 300 hFE -- IC VCE=-10V Forward current transfer ratio hFE 250 200 Ta=75C 25C - 0.3 - 0.1 - 0.03 - 0.01 25C Ta=75C 25C 150 -25C 100 -25C - 0.3 - 0.1 - 0.03 - 0.01 -1 50 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT -- IE 200 180 Cob -- VCB Collector output capacitance Cob (pF) VCB=-10V Ta=25C 50 45 40 103 IE=0 f=1MHz Ta=25C 104 ICBO -- Ta VCB=-20V Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 30 25 20 15 ICBO (Ta) ICBO (Ta=25C) -3 -10 -30 -100 35 102 10 10 5 0 -1 1 0 60 120 180 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (C) 2 Transistor ICEO -- Ta 105 VCE=-10V -10 -3 2SA777 Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (A) 104 -1 ICP IC t=10ms ICEO (Ta) ICEO (Ta=25C) 103 - 0.3 t=1s - 0.1 - 0.03 - 0.01 102 10 - 0.003 1 0 20 40 60 80 100 120 140 - 0.001 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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